GaAs photoconductive semiconductor switch

摘要: A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with passivation layer above the intrinsic substrate gap between two electrodes of device. The configuration combination addition greatly reduces surface current leakage that has been problem for prior PCSS devices and enables employment much less expensive more reliable DC charging systems instead pulsed needed to be used devices.