Crystal orientations of β-Ga2O3 thin films formed on n-plane sapphire substrates
作者： Shinji Nakagomi , Satoru Kaneko , Yoshihiro Kokubun
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摘要: We have used X-ray pole figure analysis to study crystal orientations of β-Ga2O3 thin films deposited on (113) n-plane sapphire substrates by gallium evaporation in oxygen plasma. The were strongly (−201)-oriented. However, the (−201) plane was inclined along (110) a-plane. Crystals (−201)-oriented exhibit a threefold symmetry which is rotated increments 120° from direction c-axis a-plane sapphire. orientation explained comparing atom arrangements three different configurations and substrates.
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