作者: Shinji Nakagomi , Tsubasa Sai , Yoshihiro Kokubun
DOI: 10.1016/J.SNB.2013.01.020
关键词:
摘要: Field-effect hydrogen gas sensor devices with self-temperature compensation based on β-Ga 2 O 3 thin films were fabricated. A β-Ga 2 O 3 thin film was deposited on a sapphire …