Crystal orientations of β‐Ga2O3 thin films formed on c‐plane GaN substrate
作者： Shinji Nakagomi , Yoshihiro Kokubun
关键词: Gallium 、 Evaporation (deposition) 、 Thin film 、 Crystallography 、 Electron diffraction 、 Sapphire 、 Crystal 、 Substrate (electronics) 、 Materials science 、 Transmission electron microscopy
摘要: A β‐Ga2O3 thin film was formed on a (0001) c‐plane GaN template substrate by gallium evaporation in an oxygen plasma. From X‐ray diffraction measurements using ω–2θ and ϕ scans, the film orientation was found to be () β‐Ga2O3||(0001) GaN||(0001) sapphire. In addition, the β‐Ga2O3 had a sixfold domain structure in which the (010) planes in each crystal domain were parallel to the {} planes of GaN. This structure was confirmed by cross‐sectional and plan‐view transmission electron microscopy images and selected‐area …
sci-hub.se 参考文章(21)
Kohei Sasaki, Akito Kuramata, Takekazu Masui, Encarnación G. Víllora, Kiyoshi Shimamura, Shigenobu Yamakoshi, Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy Applied Physics Express. ,vol. 5, pp. 035502- ,(2012) , 10.1143/APEX.5.035502
Shinji Nakagomi, Yoshihiro Kokubun, Cross-sectional TEM imaging of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrates Physica Status Solidi (a). ,vol. 210, pp. 1738- 1744 ,(2013) , 10.1002/PSSA.201329040
Encarnación G. Víllora, Kiyoshi Shimamura, Kenji Kitamura, Kazuo Aoki, Takekazu Ujiie, Epitaxial relationship between wurtzite GaN and β-Ga2O3 Applied Physics Letters. ,vol. 90, pp. 234102- ,(2007) , 10.1063/1.2745645
Yuichi Oshima, Encarnación G. Víllora, Yoshitaka Matsushita, Satoshi Yamamoto, Kiyoshi Shimamura, Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy Journal of Applied Physics. ,vol. 118, pp. 085301- ,(2015) , 10.1063/1.4929417
Kohei Sasaki, Masataka Higashiwaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi, $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates IEEE Electron Device Letters. ,vol. 34, pp. 493- 495 ,(2013) , 10.1109/LED.2013.2244057
S Yoshioka, H Hayashi, A Kuwabara, F Oba, K Matsunaga, I Tanaka, Structures and energetics of Ga2O3 polymorphs Journal of Physics: Condensed Matter. ,vol. 19, pp. 346211- ,(2007) , 10.1088/0953-8984/19/34/346211
Kohei Sasaki, Masataka Higashiwaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi, MBE grown Ga2O3 and its power device applications Journal of Crystal Growth. ,vol. 378, pp. 591- 595 ,(2013) , 10.1016/J.JCRYSGRO.2013.02.015
Shinji Nakagomi, Tsubasa Sai, Yoshihiro Kokubun, Hydrogen gas sensor with self temperature compensation based on β-Ga2O3 thin film Sensors and Actuators B-chemical. ,vol. 187, pp. 413- 419 ,(2013) , 10.1016/J.SNB.2013.01.020
Tsung-Yen Tsai, Sin-Liang Ou, Ming-Tsung Hung, Dong-Sing Wuu, Ray-Hua Horng, MOCVD growth of GaN on sapphire using a Ga2O3 interlayer Journal of The Electrochemical Society. ,vol. 158, ,(2011) , 10.1149/2.073111JES
Shinji Nakagomi, Yoshihiro Kokubun, Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate Journal of Crystal Growth. ,vol. 349, pp. 12- 18 ,(2012) , 10.1016/J.JCRYSGRO.2012.04.006