Growth and characterization of β-Ga2O3 thin films on different substrates
作者： S. J. Hao , M. Hetzl , F. Schuster , K. Danielewicz , A. Bergmaier
DOI: 10.1063/1.5061794
关键词:
摘要: β-Ga 2 O 3 thin films were grown on the substrates of sapphire, GaN, and single crystals of β-Ga 2 O 3 , using plasma-assisted molecular beam epitaxy. By varying deposition conditions…
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