Crystal orientations of β-Ga2O3 thin films formed on m-plane and r-plane sapphire substrates

作者: Shinji Nakagomi , Satoru Kaneko , Yoshihiro Kokubun

DOI: 10.1002/PSSB.201451456

关键词:

摘要: We have used X-ray pole figure analyses to study crystal orientations of β-Ga2O3 thin films formed on (100) m-plane or (102) r-plane sapphire substrates prepared by gallium evaporation in oxygen plasma. The (−201) plane the was inclined be along two (110) a-planes. Crystals (−201)-oriented exhibit six-fold symmetry which a is rotated every 60° from [001] for each a-plane. In all, twelve kinds crystals substrate. Similarly, (113) n-plane. three-fold with 120° opposite direction projection c-axis six These observations can explained comparing atomic arrangements those a-plane and

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