Devices based on series-connected Schottky junctions and β-Ga 2 O 3 /SiC heterojunctions characterized as hydrogen sensors
作者： S. Nakagomi , K. Yokoyama , Y. Kokubun
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摘要: Abstract. Field-effect hydrogen gas sensor devices were fabricated with the structure of a series connection between Schottky junctions and β-Ga2O3/6H-SiC heterojunctions. β-Ga2O3 thin films deposited on n-type p-type 6H-SiC substrates by gallium evaporation in oxygen plasma. These have rectifying properties characterized as sensors Pt electrode. The hydrogen-sensing both measured range 300–500 °C. Pt/Ga2O3/n-SiC device revealed conventional diode-type devices. forward current Pt/Ga2O3/p-SiC was significantly increased under exposure to hydrogen. behaviors sensing explained using band diagrams Pt/Ga2O3/SiC biased reverse directions.
j-sens-sens-syst.net
core.ac.uk 参考文章(18)
Stephen Saddow, Anant Agarwal, Advances in Silicon Carbide Processing and Applications Artech House. ,(2004)
Shinji Nakagomi, Tsubasa Sai, Yoshihiro Kokubun, Hydrogen gas sensor with self temperature compensation based on β-Ga2O3 thin film Sensors and Actuators B-chemical. ,vol. 187, pp. 413- 419 ,(2013) , 10.1016/J.SNB.2013.01.020
Maximilian Fleischer, Hans Meixner, Gallium oxide thin films: A new material for high-temperature oxygen sensors Sensors and Actuators B-chemical. ,vol. 4, pp. 437- 441 ,(1991) , 10.1016/0925-4005(91)80148-D
Shinji Nakagomi, Yoshihiro Kokubun, Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate Journal of Crystal Growth. ,vol. 349, pp. 12- 18 ,(2012) , 10.1016/J.JCRYSGRO.2012.04.006
M. Fleischer, J. Giber, H. Meixner, H2-induced changes in electrical conductance of β-Ga2O3 thin-film systems Applied Physics A. ,vol. 54, pp. 560- 566 ,(1992) , 10.1007/BF00324340
Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi, Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates Applied Physics Letters. ,vol. 100, pp. 013504- ,(2012) , 10.1063/1.3674287
M Ogita, N Saika, Y Nakanishi, Y Hatanaka, Ga2O3 thin films for high-temperature gas sensors Applied Surface Science. ,vol. 142, pp. 188- 191 ,(1999) , 10.1016/S0169-4332(98)00714-4
Yoshihiro Kokubun, Kasumi Miura, Fumie Endo, Shinji Nakagomi, Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors Applied Physics Letters. ,vol. 90, pp. 031912- ,(2007) , 10.1063/1.2432946
M. Fleischer, H. Meixner, Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin films Sensors and Actuators B-chemical. ,vol. 6, pp. 257- 261 ,(1992) , 10.1016/0925-4005(92)80065-6
Shinji Nakagomi, Toshihiro Momo, Syuhei Takahashi, Yoshihiro Kokubun, Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction Applied Physics Letters. ,vol. 103, pp. 072105- ,(2013) , 10.1063/1.4818620