作者: Alfian Noviyanto , Bong-Ki Min , Hyun-Woo Yu , Dang-Hyok Yoon
DOI: 10.1016/J.JEURCERAMSOC.2013.10.001
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摘要: Abstract To explain the sintering behavior of 5 wt.% Sc-nitrate-added SiC, which showed a 99.3% density with fine 156 nm-sized grains, microstructural study using high resolution electron microscopy (HREM) was performed and results were compared those Tm-added had mean grain size 753 nm. Contact flattening proposed as governing mechanism for Sc-added SiC based on experimental observations an inter-granular phase thinner than 1 nm along straight boundaries. On other hand, several nm-thick curved boundary morphology, is typical microstructure that can be obtained by solution–reprecipitation combined Ostwald ripening.