Design considerations for wide bandgap based motor drive systems

摘要: The backbone of traction drive systems for electrified vehicles is based on the insulated gate bipolar junction transistors (IGBT) created from silicon (Si). Over last several years, switching devices made carbide (SiC) and gallium nitride (GaN) have become available. This has resulted in construction power electronic with greater densities better efficiency over similarly rated Si versions. Yet some hurdles still remain prior to wide spread adoption these components automotive electronics. following paper reviews current state-of-art SiC GaN devices. Challenges their implementation barriers commercialization are presented. information supplemented test results a thermal investigation. impact high speed bandgap reflected wave phenomenon also explored.