GaN power electronics for automotive application
作者： Karim S. Boutros , Rongming Chu , Brian Hughes
DOI: 10.1109/ENERGYTECH.2012.6304646
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摘要: … reviews the advantages of GaN material and devices, the performance of these devices in power … been developed over the past decade to meet certain demanding military and …
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sci-hub.se 参考文章(4)
Kai Cheng, Hu Liang, Marleen Van Hove, Karen Geens, Brice De Jaeger, Puneet Srivastava, Xuanwu Kang, Paola Favia, Hugo Bender, Stefaan Decoutere, Johan Dekoster, Jose Ignacio del Agua Borniquel, Sung Won Jun, Hua Chung, AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility Applied Physics Express. ,vol. 5, pp. 011002- ,(2012) , 10.1143/APEX.5.011002
Brian Hughes, James Lazar, Stephen Hulsey, Daniel Zehnder, Daniel Matic, Karim Boutros, GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz applied power electronics conference. pp. 2506- 2508 ,(2012) , 10.1109/APEC.2012.6166174
Rongming Chu, A Corrion, M Chen, Ray Li, D Wong, D Zehnder, B Hughes, K Boutros, 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance IEEE Electron Device Letters. ,vol. 32, pp. 632- 634 ,(2011) , 10.1109/LED.2011.2118190
Brian Hughes, Yeong Y. Yoon, Daniel M. Zehnder, Karim S. Boutros, A 95% Efficient Normally-Off GaN-on-Si HEMT Hybrid-IC Boost-Converter with 425-W Output Power at 1 MHz 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). pp. 1- 3 ,(2011) , 10.1109/CSICS.2011.6062460