Temperature dependence of R/sub on,sp/ in silicon carbide and GaAs Schottky diode

摘要: The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, R/sub on,sp/, during current density operation. Both these parameters very sensitive to temperature. Nowadays silicon carbide (SiC) GaAs two most important materials for device applications. SiC has been widely accepted as being superior because it much higher electric field, saturated electron drift velocity thermal conductivity. In this work, the electrical performance reliability Schottky diodes (SD) evaluated compared commercially available SDs. High temperature characterization performed. specific resistance on,sp/ was found increase with according T/sup 0.72/ dependence 1.89/ SiC. strong is consistent phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under operating (> 210 /spl deg/C) have lower than SiC, thus, may be preferable use over some