Codeposition of amorphous zinc tin oxide using high power impulse magnetron sputtering: characterisation and doping
作者： H N Tran , E L H Mayes , B J Murdoch , D G McCulloch , D R McKenzie
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摘要: Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC targets yielded a gradient in the Zn:Sn ratio across 4-inch diameter sapphire substrate. The electrical optical properties of were studied as function composition. As-deposited, films amorphous, transparent semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, mTorr H2) resulted significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations ~1 × 1017 cm-3 mobilities up to 13 cm2 V-1 s-1. These characteristics are suitable for device applications proved stable. X-ray photoelectron spectroscopy used explore valence band structure show that downward surface band-bending OH attachment. results suggest HiPIMS can produce dense, quality amorphous ZTO including thin transistors.
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