In-situ TEM study of domain switching in GaN thin films
作者： Baoming Wang , Tun Wang , Aman Haque , Michael Snure , Eric Heller
DOI: 10.1063/1.5002690
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摘要: Microstructural response of gallium nitride (GaN) films, grown by metal-organic chemical vapor deposition, was studied as a function applied electrical field. In-situ transmission electron microscopy showed sudden change in the diffraction pattern reflecting domain switching at around 20 V bias, perpendicular to polarization direction. No such observed for thicker films or field along This anomalous behavior is explained nanoscale size effects on piezoelectric coefficients GaN, which can be 2–3 times larger than bulk value. As result, large amount internal energy imparted 100 nm thick induce relatively lower voltages events scale.
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