Formation of a Ba-Te Surface on GaAs
作者： Kevin A. Boulais , Francisco Santiago , Karen J. Long , Victor H. Gehman
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摘要: The formation of a Ba-Te surface on GaAs has been investigated. was created using molecular beam epitaxy (MRS). A (100) first exposed to Te and characterized x-ray photoelectron spectroscopy (XPS), reflective high energy electron diffraction (RHEED) low (LEED). Te-reacted then BaF 2 flux producing second reaction. In this reaction, the dissociated leaving barium but no fluorine. This is in contrast clean (no tellurium) which shown grow single crystal. Although order exists during early stages growth, further exposure gives way polycrystalline form. paper discusses analysis surface.
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sci-hub.se 参考文章(16)
G. M. Zhang, Crossover exponents in percolating superconductor–nonlinear-conductor mixtures Physical Review B. ,vol. 53, pp. 20- 23 ,(1996) , 10.1103/PHYSREVB.53.20
Y. Gobil, J. Cibert, K. Saminadayar, S. Tatarenko, Adsorption of Te on GaAs(100) Surface Science Letters. ,vol. 211, pp. 969- 978 ,(1989) , 10.1016/0039-6028(89)90863-7
N. Grandjean, J. Massies, M. Leroux, Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001) Physical Review B. ,vol. 53, pp. 998- 1001 ,(1996) , 10.1103/PHYSREVB.53.998
D. Albert, B. Olszowi, W. Spahn, J. Nürnberger, K. Schüll, M. Korn, V. Hock, M. Ehinger, W. Faschinger, G. Landwehr, Optical properties and defect characterization of ZnSe laser diodes grown on tellurium-terminated GaAs Journal of Crystal Growth. pp. 571- 574 ,(1998) , 10.1016/S0022-0248(98)80119-X
W. Spahn, H.R. Ress, K. Schüll, M. Ehinger, D. Hommel, G. Landwehr, The growth start on the heterovalent GaAsZnSe interface under Te, Se and Zn termination Journal of Crystal Growth. ,vol. 159, pp. 761- 765 ,(1996) , 10.1016/0022-0248(95)00871-3
M. F. Stumborg, F. Santiago, T. K. Chu, J. L. Price, J. R. Leibowitz, Growth and interfacial chemistry of insulating (100) barium fluoride on gallium arsenide Journal of Applied Physics. ,vol. 77, pp. 2739- 2744 ,(1995) , 10.1063/1.358743
W.N. Rodrigues, V.H. Etgens, M. Sauvage-Simkin, G. Rossi, F. Sirotti, R. Pinchaux, F. Rochet, Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface Solid State Communications. ,vol. 95, pp. 873- 877 ,(1995) , 10.1016/0038-1098(95)00397-5
M. F. Stumborg, T. K. Chu, F. Santiago, J. L. Price, N. A. Guardala, D. J. Land, Surface chemical state populations in the molecular beam epitaxy deposition of BaF2 on GaAs by x‐ray photoelectron spectroscopy and heavy‐ion backscattering spectroscopy Journal of Vacuum Science and Technology. ,vol. 14, pp. 69- 79 ,(1996) , 10.1116/1.579882
E. Ayyıldız, B. Batı, C. Temirci, A. Türüt, Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes Applied Surface Science. ,vol. 152, pp. 57- 62 ,(1999) , 10.1016/S0169-4332(99)00301-3
M. Copel, M. C. Reuter, Efthimios Kaxiras, R. M. Tromp, Surfactants in epitaxial growth. Physical Review Letters. ,vol. 63, pp. 632- 635 ,(1989) , 10.1103/PHYSREVLETT.63.632