Effect of anisotropic band parameters on band-to-band Auger recombination in In 0.72 Ga 0.28 As 0.6 P 0.4
作者： Masumi Takeshima
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Akira Sugimura, Band‐to‐band Auger recombination in InGaAsP lasers Applied Physics Letters. ,vol. 39, pp. 21- 23 ,(1981) , 10.1063/1.92549
N. K. Dutta, R. J. Nelson, Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination Applied Physics Letters. ,vol. 38, pp. 407- 409 ,(1981) , 10.1063/1.92380
A. Sugimura, Band-to-band Auger effect on the output power saturation in InGaAsP LED's IEEE Journal of Quantum Electronics. ,vol. 17, pp. 441- 444 ,(1981) , 10.1109/JQE.1981.1071143
A. Sugimura, Band-to-band Auger recombination effect on InGaAsP laser threshold IEEE Journal of Quantum Electronics. ,vol. 17, pp. 627- 635 ,(1981) , 10.1109/JQE.1981.1071190
N. K. Dutta, R. J. Nelson, The case for Auger recombination in In1−xGaxAsyP1−y Journal of Applied Physics. ,vol. 53, pp. 74- 92 ,(1982) , 10.1063/1.329942
R. J. Nelson, N. K. Dutta, Calculated Auger rates and temperature dependence of threshold for semiconductor lasers emitting at 1.3 and 1.55 μm Journal of Applied Physics. ,vol. 54, pp. 2923- 2929 ,(1983) , 10.1063/1.332494
A. Haug, Auger recombination in InGaAsP Applied Physics Letters. ,vol. 42, pp. 512- 514 ,(1983) , 10.1063/1.93986
M.G. Burt, Auger recombination rate in InGaAsP lasers Electronics Letters. ,vol. 18, pp. 806- 807 ,(1982) , 10.1049/EL:19820548
A. Haug, W. Schmid, Recombination mechanism in heavily doped silicon Solid-state Electronics. ,vol. 25, pp. 665- 667 ,(1982) , 10.1016/0038-1101(82)90069-7
W. Lochmann, A. Haug, Phonon-assisted Auger recombination in Si with direct calculation of the overlap integrals Solid State Communications. ,vol. 35, pp. 553- 556 ,(1980) , 10.1016/0038-1098(80)90896-0