作者: R. Stanley Williams , Yong Chen
DOI:
关键词:
摘要: Configurable electronic circuits comprise arrays of cross-points one layer metal/semiconductive nanoscale lines crossed by a second lines, with configurable between the lines. Methods are provided for altering thickness and/or resistance oxidation or reduction methods, employing solid material as layer. Specifically method is configuring devices in crossbar array comprising first metal semiconductor material. The comprises: (a) forming on substrate; (b) phase at least areas where to cross layer; (c) material, over and (d) changing property thereby configure devices.