Nitride semiconductor device manufacturing method
作者： 洋志 鹿内 , Hiroshi Shikauchi , Masaru Shinomiya , 和徳 萩本 , Kazunori Hagimoto
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摘要: PROBLEM TO BE SOLVED: To provide a nitride semiconductor device manufacturing method which grows laminated structure of group III-V layers at V/III ratio appropriate for each layer.SOLUTION: A growing multilayer film in reaction furnace to III material gas and V are introduced comprises the steps of: first layer flow rate carrier rate; second gas, is lower than higher thereby layer.
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