Group III nitride semiconductor light-emitting element and method of manufacturing same
作者： Fujita Takehiko , Watanabe Yasuhiro
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摘要: A group III nitride semiconductor light-emitting element having longer life than conventional elements and a method of manufacturing the same are provided. 100 comprises, in following order: an n-type layer 30; laminated body 40 obtained by alternately laminating barrier 40a well 40b narrower bandgap stated order so that number layers both N, where N is integer; AlN guide 60; p-type 70, wherein 60 has thickness 0.5 nm or more 2.0 less.
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