OPTICAL SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要: PROBLEM TO BE SOLVED: To improve the light emitting efficiency of ultraviolet element using a group III nitride semiconductor. SOLUTION: A PL intensity in 260 nm band is larger as an (x) value electron block layer (20 thickness) Al x Ga 1-x N (a to c). Meanwhile, when mole ratio 0.89 (shown by (a) Fig.), broad emission peak, i.e. peak p-AlGaN 21 observed at approximately 290 nm, and overflow electrons from MQW caused, but 0.97 or 1.0, wavelength hardly observed, excellently suppressed high layer. Like this, providing, for example, Al(Ga)N ≥0.95 Al, which high, external quantum can be enhanced, itself also increased, excellent values thereof whose utility obtained. COPYRIGHT: (C)2010,JPO&INPIT