Group iii nitride semiconductor light-emitting element and method for manufacturing the same

摘要: PROBLEM TO BE SOLVED: To propose a group III nitride semiconductor light-emitting element having an increased life, and method for manufacturing such element.SOLUTION: A 1 comprises: n-type layer 32; luminescent 40 including at least Al; p-type 150 electronic block 51, clad 152 contact 53 which are laminated in turn, this order. The 51 is AlGaN (0.55≤x≤1.0), the AlGaN(0≤y≤0.1), AlGaN, of Al composition z gradually decreases from toward over entire thickness 152; reduction rate its direction 0.01 to 0.025/nm.SELECTED DRAWING: Figure 2