High air stability of threshold voltage on gate bias stress in pentacene TFTs with a hydroxyl-free and amorphous fluoropolymer as gate insulators
作者： Tokiyoshi Umeda , Daisuke Kumaki , Shizuo Tokito
DOI: 10.1016/J.ORGEL.2008.02.015
关键词:
摘要: Abstract We investigated the air stabilities of threshold voltages ( V th ) on gate bias stress in pentacene thin-film transistors (TFTs) with a hydroxyl-free and amorphous fluoropolymer as insulators. The 40-nm-thick thin films spin-coated had excellent electrical insulating properties, TFTs exhibited negligible current hysteresis, low leakage current, field-effect mobility 0.45 cm 2 /Vs an on/off ratio 3 × 10 7 when it was operated at −20 V ambient air. After 10 4 s, small shift below 1.1 V obtained despite non-passivation layer. have discussed that stability attributed to insulator surface without hydroxyl groups.
elsevier.com
sci-hub.se 参考文章(26)
Tokiyoshi Umeda, Shizuo Tokito, Daisuke Kumaki, High-mobility and air-stable organic thin-film transistors with highly ordered semiconducting polymer films Journal of Applied Physics. ,vol. 101, pp. 054517- 054522 ,(2007) , 10.1063/1.2711780
F. R. Libsch, J. Kanicki, Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors Applied Physics Letters. ,vol. 62, pp. 1286- 1288 ,(1993) , 10.1063/1.108709
C. Goldmann, C. Krellner, K. P. Pernstich, S. Haas, D. J. Gundlach, B. Batlogg, Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density Journal of Applied Physics. ,vol. 99, pp. 034507- ,(2006) , 10.1063/1.2170421
Hagen Klauk, Marcus Halik, Ute Zschieschang, Günter Schmid, Wolfgang Radlik, Werner Weber, High-mobility polymer gate dielectric pentacene thin film transistors Journal of Applied Physics. ,vol. 92, pp. 5259- 5263 ,(2002) , 10.1063/1.1511826
Daisuke Kumaki, Tokiyoshi Umeda, Shizuo Tokito, Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors: Deprotonation of SiOH on SiO2 gate-insulator surface Applied Physics Letters. ,vol. 92, pp. 093309- ,(2008) , 10.1063/1.2890853
C. Goldmann, D. J. Gundlach, B. Batlogg, Evidence of water-related discrete trap state formation in pentacene single-crystal field-effect transistors Applied Physics Letters. ,vol. 88, pp. 063501- ,(2006) , 10.1063/1.2171479
Gong Gu, Michael G. Kane, Siun-Chuon Mau, Reversible memory effects and acceptor states in pentacene-based organic thin-film transistors Journal of Applied Physics. ,vol. 101, pp. 014504- ,(2007) , 10.1063/1.2403241
Sang Yoon Yang, Se Hyun Kim, Kwonwoo Shin, Hayoung Jeon, Chan Eon Park, Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics Applied Physics Letters. ,vol. 88, pp. 173507- ,(2006) , 10.1063/1.2199592
T. Mathis, W. L. Kalb, A. F. Stassen, S. Haas, B. Batlogg, Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects Applied Physics Letters. ,vol. 90, pp. 092104- ,(2007) , 10.1063/1.2709894
Hagen Klauk, Ute Zschieschang, Jens Pflaum, Marcus Halik, Ultralow-power organic complementary circuits Nature. ,vol. 445, pp. 745- 748 ,(2007) , 10.1038/NATURE05533