Organic small molecule field-effect transistors with Cytop™ gate dielectric: Eliminating gate bias stress effects
作者： T. Mathis , W. L. Kalb , A. F. Stassen , S. Haas , B. Batlogg
DOI: 10.1063/1.2709894
关键词:
摘要: Organic field-effect transistors with unprecedented resistance against gate bias stress are described. The single crystal and thin-film employ the organic dielectric Cytop™. This fluoropolymer is highly water repellent shows a remarkable electrical breakdown strength. consistently of very high quality: near zero onset, steep subthreshold swing [average: 1.3nFV∕(decadecm2)] negligible current hysteresis. Furthermore, extended only leads to marginal changes in transfer characteristics. It appears that there no conceptual limitation for stability semiconductors contrast hydrogenated amorphous silicon.
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sci-hub.st 参考文章(15)
V. Usov, S. Murphy, I. V. Shvets, Study of in-plane magnetic anisotropy of ultrathin epitaxial Fe films grown on vicinal Mo(110) surface Journal of Applied Physics. ,vol. 95, pp. 7312- 7314 ,(2004) , 10.1063/1.1652411
W. B. Jackson, J. M. Marshall, M. D. Moyer, Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon Physical Review B. ,vol. 39, pp. 1164- 1179 ,(1989) , 10.1103/PHYSREVB.39.1164
C. Goldmann, C. Krellner, K. P. Pernstich, S. Haas, D. J. Gundlach, B. Batlogg, Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density Journal of Applied Physics. ,vol. 99, pp. 034507- ,(2006) , 10.1063/1.2170421
C. Goldmann, D. J. Gundlach, B. Batlogg, Evidence of water-related discrete trap state formation in pentacene single-crystal field-effect transistors Applied Physics Letters. ,vol. 88, pp. 063501- ,(2006) , 10.1063/1.2171479
Gilles Horowitz, Riadh Hajlaoui, Denis Fichou, Ahmed El Kassmi, GATE VOLTAGE DEPENDENT MOBILITY OF OLIGOTHIOPHENE FIELD-EFFECT TRANSISTORS Journal of Applied Physics. ,vol. 85, pp. 3202- 3206 ,(1999) , 10.1063/1.369661
K. P. Pernstich, D. Oberhoff, C. Goldmann, B. Batlogg, Modeling the water related trap state created in pentacene transistors Applied Physics Letters. ,vol. 89, pp. 213509- ,(2006) , 10.1063/1.2396924
Myung-Han Yoon, Choongik Kim, Antonio Facchetti, Tobin J. Marks, Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors Journal of the American Chemical Society. ,vol. 128, pp. 12851- 12869 ,(2006) , 10.1021/JA063290D
Janos Veres, Simon Ogier, Giles Lloyd, Dago de Leeuw, Gate Insulators in Organic Field-Effect Transistors Chemistry of Materials. ,vol. 16, pp. 4543- 4555 ,(2004) , 10.1021/CM049598Q
R.A Laudise, Ch Kloc, P.G Simpkins, T Siegrist, Physical vapor growth of organic semiconductors Journal of Crystal Growth. ,vol. 187, pp. 449- 454 ,(1998) , 10.1016/S0022-0248(98)00034-7
H. L. Gomes, P. Stallinga, M. Cölle, D. M. de Leeuw, F. Biscarini, Electrical instabilities in organic semiconductors caused by trapped supercooled water Applied Physics Letters. ,vol. 88, pp. 082101- ,(2006) , 10.1063/1.2178410