On photoelectrocatalysis of hydrogen and oxygen evolution

摘要: Abstract In most previous treatments of photoelectrochemical kinetics, the focus attention has been on hole-electron pair formation by light, transport to surface and various losses arising from recombination. surfaces SiO x (2 > 0.8), onset potential varies ca 0.8 V. When variation metal-decorated p-type semiconductor is plotted against exchange current density for dark evolution hydrogen a slope close 2RT/F found. For oxygen metal decorated n-type semiconductor, there dependence metal-oxygen bond strength in alkali but zero acid solution. Work-function dependences are present: no correlation with effects work-function. The band-gap states, recombination treatment upon work-function compared data found inconsistent it. If it assumed that deposition have strong effect charge-transfer rate constants, several correlations can be rationalized. Implications drawn regarding role played electrocatalysis photoelectrochemistry.