Is ion sputtering always a "negative homoepitaxial deposition"?
作者： G. Costantini , F. Buatier de Mongeot , C. Boragno , U. Valbusa
DOI: 10.1103/PHYSREVLETT.86.838
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摘要: We present a scanning tunneling microscopy study of the direct comparison between homoepitaxial deposition and surface ion sputtering on Ag(001) system. At temperature 200 K, results in mound formation similar to epitaxy case, while at higher temperatures an erosive regime sets with appearance regular square pits. Contrary conventional wisdom, which considers as vacancies, analysis single impact events reveals that process produces both adatom vacancy clusters. The key parameter determining dependence morphology turns out be mobility clusters exceeds
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