作者: Han-Don Um , Kwang-Tae Park , Jin-Young Jung , Xiaopeng Li , Keya Zhou
DOI: 10.1039/C4NR00455H
关键词:
摘要: Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling regions for light absorption (moderately doped) and metallization (degenerately doped). However, use nanowire (Si NW) is technologically challenging because difficulties forming robust Ohmic contacts that interface directly with the top-ends nanowires. Here we describe self-aligned successfully integrated into an antireflective Si NW cell. By one-step metal-assisted chemical etching, arrays formed only at light-absorbing areas between top-metal grids while selectively retaining contact underneath metal grids. We observed remarkable ∼40% enhancement blue responses internal quantum efficiency, corresponding to 12.8% comparison 8.05% conventional