作者: Takamatsu Hiroyuki , Sakota Hisakazu , Oshima Futoshi
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摘要: PROBLEM TO BE SOLVED: To evaluate crystallinity of a semiconductor thin film with accuracy, regardless the fluctuations thickness and dielectric constant base material. SOLUTION: This device is equipped with: an excitation light source 6 for irradiating onto surface p-Si 3; microwave radiating part 7 to detection 8, capable detecting intensity direct-current component fluctuating due glass substrate 2, alternating-current component, constant, generation carrier, in reflected waves from computer 9 storing index data, showing by using as parameters, measured beforehand relative sample 4 set so have known crystallinity, peak value evaluating 3, based on values detected 8 data. COPYRIGHT: (C)2010,JPO&INPIT