Theory of impurity photo-ionization spectrum of semiconductors in magnetic fields

摘要: Abstract The impurity photo-ionization magneto-optic (IPMO) effect is the of an external magnetic field on optical spectrum impurities in semiconductors. A theory IPMO has been developed for simple Two cases can be distinguished, depending whether ionization energy zero larger or smaller than 1 2 h ω c = eH/2m ∗ . In low-field case, consists a series rather strong peaks corresponding to transitions from bound levels various sub-bands continuum. high-field one, at most two, if temperature such that only lowest level appreciably occupied. Detailed calculations are presented absorption donor InSb, based wave functions similar those Yafet, Keyes and Adams