Growth dynamics of polycrystalline Ge clusters formed on surfaces during annealing of co-sputtered GeAg films
作者： Akira Sugawara , Yasuhiro Kuwana , Osamu Nittono
DOI: 10.1016/0040-6090(94)90832-X
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摘要: Abstract The growth dynamics of polycrystalline Ge clusters during annealing GeAg co-sputtered films was studied by employing in-situ transmission electron microscopy and Auger spectroscopy. During crystallization a-Ge, up to 2 μm in diameter, surrounded the Ge-depleted zones about 100 nm width, grew laterally on film plane as a result surface segregation Ge. Environmental concentration around morphological evolution suggest that rate-controlling process is and/or grain boundary diffusion atoms across zone.
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