Investigation of optical and electrical properties of amorphous Se95−xSxZn5(x=0.2, 2, 5 and 10) thin films

摘要: In this study, we reported that the optical and electrical analysis of amorphous Se90-xSxZn5 (x=0.2, 2, 5, 10) thin films. Bulk samples investigated material were prepared by melt quenching technique. Thin films ~ 300nm thickness deposited on cleaned glass substrates thermal evaporation The morphological study in powder form carried out scanning electron microscopy (SEM) confirms disorder increases at lower sulfur doping (up to 5%) whereas higher (S) (10%) defects decreases. parameters estimated from absorption spectra data measured UV-Vis-spectrophotometer wavelength range 200-900 nm. It was found value band gap (Eg) decreases up S doping. other such as coefficient (α) extinction (K) an...