Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer

摘要: Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, buffer layer including the which may improve injection and transport of electrical charges, an organic thin film transistor electronic device layer, in electrons or holes charges between layers are accelerated, thereby improving efficiency thereof, methods manufacturing same.