Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor

作者: Ryoichi Saotome , Mikiko Takada , Naoyuki Ueda , Yukiko Abe , Shinji Matsumoto

DOI:

关键词:

摘要: To provide a coating liquid for forming metal oxide film, containing: an indium compound; at least one selected from the group consisting of magnesium compound, calcium strontium and barium compound containing maximum positive value oxidation number which is IV, V, VI; organic solvent.

参考文章(52)
Shigekazu Tomai, Futoshi Utsuno, Masashi Kasami, Hirokazu Kawashima, Kazuyoshi Inoue, Koki Yano, Patterned crystalline semiconductor thin film, method for producing thin film transistor and field effect transistor ,(2008)
Yong-Hyun Kim, Boem-Jin Yoo, Won-Mok Kim, Min-jae Ko, Nam-Gyu Park, Kyung-Kon Kim, Photo-electrode comprising conductive non-metal film, and dye-sensitized solar cell comprising the same ,(2009)
Tetsuji Narasaki, Yoshihiro Tokunaga, Masataka Inuzuka, Hiroki Inagaki, Tetsuya Takeuchi, Transparent laminated film and method for producing the same ,(2009)
Jae-Woo Joung, Hye-Jin Cho, Tae-hoon Kim, Sung-Il Oh, Conductive ink composition for inkjet printing ,(2007)
Si Joon Kim, Dong Lim Kim, You Seung Rim, Woong Hee Jeong, Doo Na Kim, Doo Hyun Yoon, Hyun Jae Kim, The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process Journal of Crystal Growth. ,vol. 326, pp. 163- 165 ,(2011) , 10.1016/J.JCRYSGRO.2011.01.088