作者: Ichiro Katakabe , Yuki Inoue , Daisuke Takagi , Xinming Wang
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摘要: There are provided an electroless plating apparatus and a post-electroless cleaning method which can remove Co or Ni particles, produced upon onto Cu interconnects of electronic circuit substrate remaining on silicon oxide film as interlevel dielectric, without exerting adverse influence the interconnects. The for carrying out surface formed in having fine patterns conductive metal interconnects, includes: transfer device (62, 76, 86); loading station (58) disposed association with device; at least one cell (82) scrub (66a) and/or solution (66c) device.