Electronic structure of Pb 1-x Sn x Te semiconductor alloys

作者: Seongbok Lee , John D. Dow

DOI: 10.1103/PHYSREVB.36.5968

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参考文章(44)
J. O. Dimmock, I. Melngailis, A. J. Strauss, Band Structure and Laser Action inPbxSn1−xTe Physical Review Letters. ,vol. 16, pp. 1193- 1196 ,(1966) , 10.1103/PHYSREVLETT.16.1193
H. Preier, Recent advances in lead-chalcogenide diode lasers Applied physics. ,vol. 20, pp. 189- 206 ,(1979) , 10.1007/BF00886018
H. Holloway, Quantum efficiencies of thin‐film IV‐VI semiconductor photodiodes Journal of Applied Physics. ,vol. 50, pp. 1386- 1398 ,(1979) , 10.1063/1.326120
W. E. Spicer, J. A. Silberman, J. Morgen, I. Lindau, J. A. Wilson, An-Ban Chen, A. Sher, Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy,Hg1−xCdxTe Physical Review Letters. ,vol. 49, pp. 948- 951 ,(1982) , 10.1103/PHYSREVLETT.49.948
K. C. Hass, H. Ehrenreich, B. Velický, Electronic structure of Hg 1 − x Cd x Te Physical Review B. ,vol. 27, pp. 1088- 1100 ,(1983) , 10.1103/PHYSREVB.27.1088
M. Schlüter, G. Martinez, Marvin L. Cohen, ELECTRONIC CHARGE DENSITIES IN PbSe AND PbTe Physical Review B. ,vol. 11, pp. 3808- 3813 ,(1975) , 10.1103/PHYSREVB.11.3808
Y. Onodera, Y. Toyozawa, Persistence and Amalgamation Types in the Electronic Structure of Mixed Crystals Journal of the Physical Society of Japan. ,vol. 24, pp. 341- 355 ,(1968) , 10.1143/JPSJ.24.341
R. F. Bis, J. R. Dixon, Applicability of Vegard's Law to the PbxSn1−xTe Alloy System Journal of Applied Physics. ,vol. 40, pp. 1918- 1921 ,(1969) , 10.1063/1.1657866
J. B. Conklin, L. E. Johnson, G. W. Pratt, Energy Bands in PbTe Physical Review. ,vol. 137, pp. 1282- 1294 ,(1965) , 10.1103/PHYSREV.137.A1282