Molecular beam epitaxial growth and photoluminescence characterization of self-organized Pb1−xSnxTe quantum dots embedded in a single-crystalline CdTe host matrix
作者： Kazuto Koike , Tomoyuki Itakura , Takanori Hotei , Mitsuaki Yano
DOI: 10.1063/1.2804574
关键词: Materials science 、 Molecular beam epitaxy 、 Wide-bandgap semiconductor 、 Band gap 、 Crystal growth 、 Quantum dot 、 Self-assembly 、 Photoluminescence 、 Cadmium telluride photovoltaics 、 Optoelectronics
摘要: This report describes molecular beam epitaxial growth and photoluminescence properties of coherently embedded centrosymmetric Pb1−xSnxTe quantum dots (QDs) in a wide bandgap CdTe host matrix. These QDs were self-organized by on buffer layer at high temperature 280°C. A highly efficient midinfrared emission from the was obtained even 300K with proportional redshift to Sn content QDs. By considering both effects strain-induced band deformation confinement QD potentials, transition energy observed found agree well theoretical calculation.
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