Formation of self assembled PbTe quantum dots in CdTe on Si(111)
作者： F. Felder , A. Fognini , M. Rahim , M. Fill , E. Müller
DOI: 10.1016/J.PHPRO.2010.01.149
关键词:
摘要: Abstract We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on silicon (111) substrate. Annealing yields different photoluminescence spectra depending initial layer thickness, thickness cap annealing temperature. Generally two distinct emission peaks at ∼0.3 eV ∼0.45 eV are visible. Model calculations explaining their temperature dependence performed. The dot size corresponds well with estimated sizes from electron microscopy images. may be used as absorber within mid-infrared detector.
harvard.edu
core.ac.uk
elsevier.com
sci-hub.se 参考文章(15)
Sanjay Krishna, Darren Forman, Senthil Annamalai, Philip Dowd, Petros Varangis, Tom Tumolillo, Allen Gray, John Zilko, Kathy Sun, Mingguo Liu, Joe Campbell, Daniel Carothers, Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors Applied Physics Letters. ,vol. 86, pp. 193501- ,(2005) , 10.1063/1.1924887
Kazuto Koike, Hisashi Harada, Tomoyuki Itakura, Mitsuaki Yano, Wolfgang Heiss, Heiko Groiss, Erich Kaufmann, Gunter Hesser, Friedrich Schäffler, Photoluminescence characterization of PbTe/CdTe quantum dots grown by lattice-type mismatched epitaxy Journal of Crystal Growth. ,vol. 301, pp. 722- 725 ,(2007) , 10.1016/J.JCRYSGRO.2006.11.115
P. R. Emtage, Auger recombination and junction resistance in lead‐tin telluride Journal of Applied Physics. ,vol. 47, pp. 2565- 2568 ,(1976) , 10.1063/1.322975
Jamie Phillips, Evaluation of the fundamental properties of quantum dot infrared detectors Journal of Applied Physics. ,vol. 91, pp. 4590- 4594 ,(2002) , 10.1063/1.1455130
L. Abtin, G. Springholz, Stabilization of PbSe quantum dots by ultrathin EuTe and SrTe barrier layers Applied Physics Letters. ,vol. 93, pp. 163102- ,(2008) , 10.1063/1.3000386
S. Tsao, H. Lim, W. Zhang, M. Razeghi, High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector Applied Physics Letters. ,vol. 90, pp. 201109- ,(2007) , 10.1063/1.2740111
Kazuto Koike, Tomoyuki Itakura, Takanori Hotei, Mitsuaki Yano, Molecular beam epitaxial growth and photoluminescence characterization of self-organized Pb1−xSnxTe quantum dots embedded in a single-crystalline CdTe host matrix Applied Physics Letters. ,vol. 91, pp. 181911- ,(2007) , 10.1063/1.2804574
M. Simma, T. Fromherz, A. Raab, G. Springholz, G. Bauer, Lateral photocurrent spectroscopy on self-assembled PbSe quantum dots Applied Physics Letters. ,vol. 88, pp. 201105- ,(2006) , 10.1063/1.2202127
H. Groiss, E. Kaufmann, G. Springholz, T. Schwarzl, G. Hesser, F. Schäffler, W. Heiss, K. Koike, T. Itakura, T. Hotei, M. Yano, T. Wojtowicz, Size control and midinfrared emission of epitaxial PbTe∕CdTe quantum dot precipitates grown by molecular beam epitaxy Applied Physics Letters. ,vol. 91, pp. 222106- ,(2007) , 10.1063/1.2817951
S. Rujirawat, Y. Xin, N. D. Browning, S. Sivananthan, David J. Smith, S.-C. Y. Tsen, Y. P. Chen, V. Nathan, CdTe(111)B grown on Si(111) by molecular beam epitaxy Applied Physics Letters. ,vol. 74, pp. 2346- 2348 ,(1999) , 10.1063/1.123846