作者: Kazuto Koike , Hisashi Harada , Tomoyuki Itakura , Mitsuaki Yano , Wolfgang Heiss
DOI: 10.1016/J.JCRYSGRO.2006.11.115
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摘要: Abstract This paper describes molecular beam epitaxial growth and photoluminescence (PL) properties of PbTe quantum wells (QWs) dots (QDs) in CdTe matrix. Cross-sectional observation by atomic force microscopy (AFM) high-resolution transmission electron (HRTEM) revealed that the epitaxy mode on CdTe(1 0 0) turned from a conventional two-dimensional (2D) QW-growth at 220 °C to highly isotropic QD-growth 280 °C minimizing interface energy between rocksalt zincblende CdTe. Although both QWs QDs can emit mid-infrared PL, emission was much stronger observed even higher temperatures over 400 K. Below 120 K, however, this intense became low due band-alignment change type-I type-II thermal mismatch