Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction

作者: Pei Chen , Padmanaban S. Kuttipillai , Lili Wang , Richard R. Lunt

DOI: 10.1038/SREP40542

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摘要: We report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex atomic force microscopy (AFM). Epitaxial NaCl (001) is explored as function temperature rate which provides first detailed RHEED oscillations for growth. Layer-by-layer observed at room accompanied by clear while mode transitions to an island (3D) low temperature. At higher temperatures (>100 °C), AFM data indicate transition step-flow mode. To show importance such growth, green organic light-emitting diodes (OLEDs) are demonstrated using doped film phosphorescent emitter emissive layer. This study demonstrates ability perform non-destructive monitoring even insulating substrates could enable crystalline range optoelectronic applications.

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