Combined DMOS and a vertical bipolar transistor device and fabrication method therefor

摘要: This disclosure relates to an improved DMOS semiconductor type device which can function both as a (unipolar) and bipolar transistor device. The has two separated source regions of, for example, N+ conductivity each of these is surrounded by P- region, thus providing pair channels between region common N drain located the regions. A gate electrode disposed over functions permit electrons from flow across into when proper bias applied region. Each its own separate provided that surround respective Thus, structure with electrodes serving functioning electron Alternatively, one could emitter (or MOS operation) surrounding base electrode. To complete vertical transistor, collector electrically coupled N- serves if operated