Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode
作者： Hendrik Gezienus Albert Huizing , Freerk Van Rijs , Petrus Hubertus Cornelis Magnee
DOI:
关键词:
摘要: A semiconductor arrangement including: a substrate having layer (13) with an upper and lower surface, the being of first conductivity type; buried (12) in substrate, extending along said surface below portion (13), second (13); diffusion (26) type opposite to distance for defining breakdown voltage between (12); (45) larger than such that is voltage.
lens.org 参考文章(7)
Benedict C. K. Choy, Richard A. Blanchard, Henry C. Pao, Combined DMOS and a vertical bipolar transistor device and fabrication method therefor ,(1980)
Takeo Maeda, Masayoshi Higashizono, Semiconductor device for use in a hybrid LSI circuit ,(1990)
Hartmut Harmel, Lennart Ryman, Planar semiconductor and Zener diode device with channel stopper region ,(1993)
Raffaele Zambrano, Process for forming a buried drain or collector region in monolithic semiconductor devices ,(1991)
Martin J. Alter, Hidden zener diode structure in configurable integrated circuit ,(1989)
Vincent L. Mirtich, David M. Heminger, William H. Grant, Inductive driver circuit and method therefor ,(1996)
Rashid Bashir, François Hebert, Santis Joe De, Daton Chen, Low collector resistance bipolar transistor compatible with high voltage integrated circuits ,(1995)