Sub-Monolayer Growth of Titanium, Cobalt, and Palladium on Epitaxial Graphene
作者： Anastasia Sokolova , Franziska Kilchert , Stefan Link , Alexander Stöhr , Ulrich Starke
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摘要: We deposited metals (Ti, Co, Pd) typically used as seed layers for contacts on epitaxial graphene SiC(0001) and studied the early stages of growth in sub-monolayer regime by Scanning Tunneling Microscopy (STM). All three do not wet substrate Ostwalt ripening occurs at temperatures below 400 K. The analysis orientation metal adislands revealed their specific alignment to lattice. It is found that apparent height islands measured STM strongly deviates from true topographic height. This interpreted an indication presence scattering processes within particles increase transparency metal-graphene interface electrons. Even large are easily picked up tip allowing insight into bonding between island surface mechanisms leading intercalation.
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