Gem/Sin strained-layer superlattices fabricated by phase-locked epitaxy
作者： Kazushi Miki , Kunihiro Sakamoto , Tsunenori Sakamoto , Hajime Okumura , Naoki Takahashi
DOI: 10.1016/0022-0248(89)90438-7
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摘要: Abstract We report the fabrication of Ge m /Si n strained-layer superlattices (SLSs) using phase-locked epitaxy method. During growth SLSs, reflection high-energy electron diffraction intensity oscillation was observed clearly up to total thickness 240 monatomic-layers. The samples were characterized X-ray and Raman scattering. For a 4 16 SLS, peaks originated from superlattice structure peak assigned zone-folding mode acoustic phonon branch observed.
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