Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)
作者： Shizheng Yang , Hongliang Lv , Likun Ai , Fangkun Tian , Silu Yan
关键词:
摘要: InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of temperature nucleation layer InP/Si epitaxial investigated systematically. Cross-section morphology, surface morphology and crystal quality characterized scanning electron microscope images, atomic force microscopy high-resolution X-ray diffraction (XRD), rocking curves reciprocal space maps. interface became smoother XRD peak intensity was stronger with at 350 °C. Results show that can significantly affect process film, optimal is required to realize a high-quality wafer-level (001).
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