Catalyst-free growth of InP nanowires on patterned Si (001) substrate by using GaAs buffer layer
作者： Shiyan Li , Xuliang Zhou , Xiangting Kong , Mengke Li , Junping Mi
DOI: 10.1016/J.JCRYSGRO.2016.01.020
关键词:
摘要: Abstract The catalyst-free metal organic vapor phase epitaxial growth of InP nanowires on silicon (001) substrate is investigated using selectively grown GaAs buffer layers in V-shaped trenches. A yield up to 70% self-aligned uncommon 〈112〉 directions under the optimized conditions. evolution mechanism for discussed and demonstrated. Using this method, we can achieve branched direction switched by varying V/III ratio situ. structure characterized scanning electron microscope transmission microscopy measurements. crystal stacking-faults-free wurtzite with its c axis perpendicular nanowire axis.
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