Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

作者: K. Naji , G. Saint-Girons , J. Penuelas , G. Patriarche , L. Largeau

DOI: 10.1063/1.4811782

关键词:

摘要: It is demonstrated that the growth direction of InP nanowires grown on (001)-oriented silicon substrate strongly depends diameter gold catalyst droplets. Small droplets with less than about 15 nm lead to formation leaning {111} planes zinc blende seeds formed in early stages growth. Larger twins and these twinned variants, inducing directions corresponding 〈115〉 substrate.

参考文章(25)
L Largeau, D L Dheeraj, M Tchernycheva, G E Cirlin, J C Harmand, Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111). Nanotechnology. ,vol. 19, pp. 155704- ,(2008) , 10.1088/0957-4484/19/15/155704
Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Effects of Facet Orientation on Relative Stability between Zinc Blende and Wurtzite Structures in Group III–V Nanowires Japanese Journal of Applied Physics. ,vol. 49, pp. 055003- ,(2010) , 10.1143/JJAP.49.055003
Emanuele Uccelli, Jordi Arbiol, Cesar Magen, Peter Krogstrup, Eleonora Russo-Averchi, Martin Heiss, Gabriel Mugny, François Morier-Genoud, Jesper Nygård, Joan Ramon Morante, Anna Fontcuberta i Morral, Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates Nano Letters. ,vol. 11, pp. 3827- 3832 ,(2011) , 10.1021/NL201902W
Jia Wang, Sébastien Plissard, Moïra Hocevar, Thuy T. T. Vu, Tilman Zehender, George G. W. Immink, Marcel A. Verheijen, Jos Haverkort, Erik P. A. M. Bakkers, Position-controlled [100] InP nanowire arrays Applied Physics Letters. ,vol. 100, pp. 1- 3 ,(2012) , 10.1063/1.3679136
Frank Glas, Jean-Christophe Harmand, Gilles Patriarche, Why does wurtzite form in nanowires of III-V zinc blende semiconductors? Physical Review Letters. ,vol. 99, pp. 146101- ,(2007) , 10.1103/PHYSREVLETT.99.146101
Eleonora Russo-Averchi, Martin Heiss, Lionel Michelet, Peter Krogstrup, Jesper Nygard, Cesar Magen, Joan Ramon Morante, Emanuele Uccelli, Jordi Arbiol, A. Fontcuberta i Morral, Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon. Nanoscale. ,vol. 4, pp. 1486- 1490 ,(2012) , 10.1039/C2NR11799A
Michael Moewe, Linus C. Chuang, Vladimir G. Dubrovskii, Connie Chang-Hasnain, Growth mechanisms and crystallographic structure of InP nanowires on lattice-mismatched substrates Journal of Applied Physics. ,vol. 104, pp. 044313- ,(2008) , 10.1063/1.2968345
R. S. Wagner, W. C. Ellis, VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH Applied Physics Letters. ,vol. 4, pp. 89- 90 ,(1964) , 10.1063/1.1753975
Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui, Control of InAs Nanowire Growth Directions on Si Nano Letters. ,vol. 8, pp. 3475- 3480 ,(2008) , 10.1021/NL802398J
F. Bachmann, Ralf Hielscher, Helmut Schaeben, Texture Analysis with MTEX - Free and Open Source Software Toolbox Solid State Phenomena. ,vol. 160, pp. 63- 68 ,(2010) , 10.4028/WWW.SCIENTIFIC.NET/SSP.160.63