III–V compound materials and lasers on silicon

作者: Wenyu Yang , Yajie Li , Fangyuan Meng , Hongyan Yu , Mengqi Wang

DOI: 10.1088/1674-4926/40/10/101305

关键词:

摘要: … mainly include materials such as GaAs and InP. The … DFB laser with a buried ridge stripe (BRS) structure based on the SAMB method [53] , as shown in Fig. 4(a). The hybrid DFB laser …

参考文章(64)
Shiyan Li, Xuliang Zhou, Xiangting Kong, Mengke Li, Junping Mi, Jing Bian, Wei Wang, Jiaoqing Pan, Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped trenches on Si Journal of Crystal Growth. ,vol. 426, pp. 147- 152 ,(2015) , 10.1016/J.JCRYSGRO.2015.05.033
Shi-Yan Li, Xu-Liang Zhou, Xiang-Ting Kong, Meng-Ke Li, Jun-Ping Mi, Jing Bian, Wei Wang, Jiao-Qing Pan, Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping Chinese Physics Letters. ,vol. 32, pp. 028101- ,(2015) , 10.1088/0256-307X/32/2/028101
Zhechao Wang, Bin Tian, Marianna Pantouvaki, Weiming Guo, Philippe Absil, Joris Van Campenhout, Clement Merckling, Dries Van Thourhout, Room-temperature InP distributed feedback laser array directly grown on silicon Nature Photonics. ,vol. 9, pp. 837- 842 ,(2015) , 10.1038/NPHOTON.2015.199
Xuliang Zhou, Jiaoqing Pan, Renrong Liang, Jing Wang, Wei Wang, Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate Journal of Semiconductors. ,vol. 35, pp. 073002- ,(2014) , 10.1088/1674-4926/35/7/073002
S. M. Ting, E. A. Fitzgerald, Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates Journal of Applied Physics. ,vol. 87, pp. 2618- 2628 ,(2000) , 10.1063/1.372227
Y. Takano, M. Hisaka, N. Fujii, K. Suzuki, K. Kuwahara, S. Fuke, Reduction of threading dislocations by InGaAs interlayer in GaAs layers grown on Si substrates Applied Physics Letters. ,vol. 73, pp. 2917- 2919 ,(1998) , 10.1063/1.122629
Yasufumi Takagi, Hiroo Yonezu, Yoshiaki Hachiya, Kangsa Pak, Reduction Mechanism of Threading Dislocation Density in GaAs Epilayer Grown on Si Substrate by High-Temperature Annealing Japanese Journal of Applied Physics. ,vol. 33, pp. 3368- 3372 ,(1994) , 10.1143/JJAP.33.3368
Hidefumi Mori, Masami Tachikawa, Mitsuru Sugo, Yoshio Itoh, GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process Applied Physics Letters. ,vol. 63, pp. 1963- 1965 ,(1993) , 10.1063/1.110615
John Justice, Chris Bower, Matthew Meitl, Marcus B. Mooney, Mark A. Gubbins, Brian Corbett, Wafer-scale integration of group III – V lasers on silicon using transfer printing of epitaxial layers Nature Photonics. ,vol. 6, pp. 610- 614 ,(2012) , 10.1038/NPHOTON.2012.204
Jurgen Michel, Jifeng Liu, Lionel C. Kimerling, High-performance Ge-on-Si photodetectors Nature Photonics. ,vol. 4, pp. 527- 534 ,(2010) , 10.1038/NPHOTON.2010.157