High vertical yield InP nanowire growth on Si(111) using a thin buffer layer.
作者： H A Fonseka , H H Tan , J Wong-Leung , J H Kang , P Parkinson
DOI: 10.1088/0957-4484/24/46/465602
关键词:
摘要: We demonstrate the growth of InP nanowires on Si(111) using a thin buffer layer. The layer is grown two-step procedure. initial formation ensured by very low temperature. An extremely high V/III ratio necessary to prevent In droplet at this second higher temperature and we find that post-growth annealing does not improve its crystal quality significantly. It found layers inherently have (111)B polarity. Nanowires same morphology optical properties as substrates. vertical yield over 97% also defects in do affect morphology, or
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M A Verheijen, E P A M Bakkers, A R Balkenende, A L Roest, M M H Wagemans, M Kaiser, H J Wondergem, P C J Graat, Cross-sectional studies of epitaxial growth of InP and GaP nanowires on Si and Ge Springer Berlin Heidelberg. pp. 295- 298 ,(2005) , 10.1007/3-540-31915-8_62
John E. Ayers, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization ,(2007)
Wing Kwan Liu, Michael Banzon Santos, Thin Films: Heteroepitaxial Systems Thin Films: Heteroepitaxial Systems. Series: Series on Directions in Condensed Matter Physics. ,vol. 15, ,(1999) , 10.1142/3715
Katsuhiro Tomioka, Takashi Fukui, III–V Semiconductor Nanowires on Si by Selective-Area Metal-Organic Vapor Phase Epitaxy Semiconductor Nanostructures for Optoelectronic Devices. pp. 67- 101 ,(2012) , 10.1007/978-3-642-22480-5_3
Yonatan Calahorra, Yaakov Greenberg, Shimon Cohen, Dan Ritter, Native-oxide-based selective area growth of InP nanowires via metal-organic molecular beam epitaxy mediated by surface diffusion. Nanotechnology. ,vol. 23, pp. 245603- 245603 ,(2012) , 10.1088/0957-4484/23/24/245603
Eugene A Fitzgerald, Y‐H Xie, Don Monroe, PJ Silverman, JM Kuo, AR Kortan, FA Thiel, BE Weir, Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 10, pp. 1807- 1819 ,(1992) , 10.1116/1.586204
M.J. Hÿtch, E. Snoeck, R. Kilaas, Quantitative measurement of displacement and strain fields from HREM micrographs Ultramicroscopy. ,vol. 74, pp. 131- 146 ,(1998) , 10.1016/S0304-3991(98)00035-7
J. R. Patel, P. E. Freeland, M. S. Hybertsen, D. C. Jacobson, J. A. Golovchenko, Location of atoms in the first monolayer of GaAs on Si. Physical Review Letters. ,vol. 59, pp. 2180- 2183 ,(1987) , 10.1103/PHYSREVLETT.59.2180
S. Perera, K. Pemasiri, M. A. Fickenscher, H. E. Jackson, L. M. Smith, J. Yarrison-Rice, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish, Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy Applied Physics Letters. ,vol. 97, pp. 023106- ,(2010) , 10.1063/1.3463036
Linus C. Chuang, Michael Moewe, Shanna Crankshaw, Connie Chang-Hasnain, Optical properties of InP nanowires on Si substrates with varied synthesis parameters Applied Physics Letters. ,vol. 92, pp. 013121- ,(2008) , 10.1063/1.2832643