Photocathode electron beam sources using GaN and InGaN with NEA surface
作者： T. Nishitani , T. Maekawa , M. Tabuchi , T. Meguro , Y. Honda
DOI: 10.1117/12.2076681
关键词:
摘要: A photocathode electron source using p-type GaN and InGaN semiconductors with a negative affinity (NEA) surface has been studied for its ability to maintain an extended NEA state. The key technology of NEA photocathodes is the formation electric dipoles by atoms on surface, which makes it possible photo excited electrons in conduction band minimum escape into vacuum. This means that order keep electron energy spread as small possible, excitation photon energy should be tuned gap energy. However, the NEA damaged adsorption residual gas back-bombardment ionized by photoelectrons. were measured lifetime quantum yield excitation energy corresponding comparison GaAs conventional photocathode. Lifetime NEA-photocathodes 21 times 7.7 longer respectively than that using GaAs.
harvard.edu
sci-hub.se 参考文章(18)
A. H. Sommer, H. H. Whitaker, B. F. Williams, Thickness of cs and Cs-O Films on GaAs(Cs) and GaAs(Cs-O) Photocathodes Applied Physics Letters. ,vol. 17, pp. 273- 274 ,(1970) , 10.1063/1.1653398
P. Lautenschlager, M. Garriga, S. Logothetidis, M. Cardona, Interband critical points of GaAs and their temperature dependence. Physical Review B. ,vol. 35, pp. 9174- 9189 ,(1987) , 10.1103/PHYSREVB.35.9174
C. Y. Su, W. E. Spicer, I. Lindau, Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces Journal of Applied Physics. ,vol. 54, pp. 1413- 1422 ,(1983) , 10.1063/1.332166
K. Aulenbacher, J. Schuler, D. v. Harrach, E. Reichert, J. Röthgen, A. Subashev, V. Tioukine, Y. Yashin, Pulse response of thin III/V semiconductor photocathodes Journal of Applied Physics. ,vol. 92, pp. 7536- 7543 ,(2002) , 10.1063/1.1521526
Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro, High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes Japanese Journal of Applied Physics. ,vol. 48, pp. 06FF02- ,(2009) , 10.1143/JJAP.48.06FF02
Sol M. Gruner, Don Bilderback, Ivan Bazarov, Ken Finkelstein, Geoffrey Krafft, Lia Merminga, Hasan Padamsee, Qun Shen, Charles Sinclair, Maury Tigner, Energy recovery linacs as synchrotron radiation sources (invited) Review of Scientific Instruments. ,vol. 73, pp. 1402- 1406 ,(2002) , 10.1063/1.1420754
T. Nishitani, T. Nakanishi, M. Yamamoto, S. Okumi, F. Furuta, M. Miyamoto, M. Kuwahara, N. Yamamoto, K. Naniwa, O. Watanabe, Y. Takeda, H. Kobayakawa, Y. Takashima, H. Horinaka, T. Matsuyama, K. Togawa, T. Saka, M. Tawada, T. Omori, Y. Kurihara, M. Yoshioka, K. Kato, T. Baba, Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes Journal of Applied Physics. ,vol. 97, pp. 094907- 094907 ,(2005) , 10.1063/1.1886888
S. Pastuszka, M. Hoppe, D. Kratzmann, D. Schwalm, A. Wolf, A. S. Jaroshevich, S. N. Kosolobov, D. A. Orlov, A. S. Terekhov, Preparation and performance of transmission-mode GaAs photocathodes as sources for cold dc electron beams Journal of Applied Physics. ,vol. 88, pp. 6788- 6800 ,(2000) , 10.1063/1.1311307
B. Monemar, Fundamental energy gap of GaN from photoluminescence excitation spectra Physical Review B. ,vol. 10, pp. 676- 681 ,(1974) , 10.1103/PHYSREVB.10.676
Francisco Machuca, Zhi Liu, Yun Sun, P. Pianetta, W. E. Spicer, R. F. W. Pease, Role of oxygen in semiconductor negative electron affinity photocathodes Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 20, pp. 2721- 2725 ,(2002) , 10.1116/1.1521742