193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns
作者： F. Gontad , J.C. Conde , S. Chiussi , C. Serra , P. González
DOI: 10.1016/J.APSUSC.2015.11.240
关键词:
摘要: Abstract 193 nm Excimer laser assisted growth and crystallization of amorphous Si/Ge bilayer patterns with circular structures 3 μm diameter around 25 nm total thickness, is presented. Amorphous were grown by Laser induced Chemical Vapor Deposition, using nanostencils as shadow masks then irradiated the same to induce structural compositional modifications for producing crystalline SiGe alloys through fast melting/solidification cycles. Compositional analyses demonstrated that pulses 240 mJ/cm 2 lead graded Si rich discs 2 μm on top, a buried Ge layer, rings surrounding each feature, predicted previous numerical simulation.
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