Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers
作者： J.C. Conde , S. Chiussi , E. Martín , F. Gontad , L. Fornarini
DOI: 10.1016/J.TSF.2009.10.074
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摘要: Abstract In this manuscript, a 3-D axisymmetric model for the heteroepitaxial growth induced by irradiating thin patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers on Si (100) with pulsed UV-laser radiation, is presented. For reducing optimization steps, an efficient simulation of laser processes that include rapid heating solidification phenomena in range several tenth nanoseconds, must be performed, if alloy composition quality has to adjusted. study, effects various energy densities different Si/Ge bi-layer structures been predicted adjusted obtain desired Ge concentration profiles applications as sacrificial layers, i.e. containing film buried under rich surface layer. The numerical includes temperature dependent variations thermophysical properties takes coupled hydrodynamic Boussinesq fluid, estimate element interdiffusion during process predicting profiles.
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