Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)
作者： J.C. Conde , E. Martín , F. Gontad , S. Chiussi , L. Fornarini
DOI: 10.1016/J.TSF.2009.09.135
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摘要: Abstract A Finite Element Method (FEM) study of the coupled thermal-stress during heteroepitaxial growth induced by excimer laser radiation patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) provides high energy densities very short pulse (20 ns) provoking, at same time, melting solidification phenomena in range several tenths nanoseconds. These play an important role SiGe structures characterized Ge concentration buried under Si rich surface. In addition, thermal-stresses that appear before after processes can also affect to epitaxial quality alloys these and, consequence, it necessary predict their effects. aim this work estimate threshold corresponding interfaces borders structures.
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